IEEE - Institute of Electrical and Electronics Engineers, Inc. - Two-dimensional numerical simulation of the channel electron in an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMT

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Zhang, X.H. ; Yang, Y.F. ; Wang, Z.G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 114 - 116
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642345
Regular:

A two-dimensional quantum model based on the solution of the Schrodinger and Poisson equations is first presented for an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMT. According... View More

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