IEEE - Institute of Electrical and Electronics Engineers, Inc. - Microwave-frequency operation of resonant tunneling high electron mobility transistors

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Chen, K.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 106 - 109
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642343
Regular:

Microwave-frequency characteristics of a highly functional InP-based resonant-tunneling high electron mobility transistor (RTHELT) are reported in this paper. Based on small-signal S-parameter... View More

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