IEEE - Institute of Electrical and Electronics Engineers, Inc. - Early voltage of SiGe heterojunction bipolar transistors

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Yuan, J.S. ; Song, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 102 - 105
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642342
Regular:

An analytical equation of the Early voltage, including the neutral-base recombination effect, is evaluated. The general analytical equation is valid for SiGe bipolar transistors with a flat,... View More

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