IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of low-energy backsurface gettering on the properties of low-frequency excess noise in NH/sub 3/ and N/sub 2/O nitrided MOSFETs

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Wang, W. ; Surya, C. ; Lai, P.T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 98 - 101
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642341
Regular:

Nitridation of the gate dielectric for n-channel Si MOSFETs is carried out by rapid thermal annealing in either NH/sub 3/ or N/sub 2/O followed by low-energy Ar/sup +/ gettering. The effects on... View More

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