IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transport of charge and electronic structure of traps in SONOS structures

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Gritsenko, V.A. ; Novikov, Yu.N. ; Morokov, Yu.N. ; Wong, H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 74 - 77
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642335
Regular:

In this experiment, we found that the barrier height is 2.0 eV for tunneling electron injecting from Al/Si/sub 3/N/sub 4/ and 1.5 eV for hole injecting from Au/Si/sub 3/N/sub 4/ interface. The... View More

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