IEEE - Institute of Electrical and Electronics Engineers, Inc. - Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Poon, M.C. ; Deng, F. ; Wong, H. ; Wong, M. ; Sin, J.K.O. ; Lan, S.S. ; Ho, C.H. ; Han, P.G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 65 - 68
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642333
Regular:

Metal silicides have been widely used in microelectronic industries, especially as contact material to reduce the series resistance of source, drain and gate regions in MOSFETs. Among all... View More

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