IEEE - Institute of Electrical and Electronics Engineers, Inc. - Suppression of reverse short channel effect by nitrogen implantation and its implications on nitrogen as a dopant species for applications in 0.25 /spl mu/m technology

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Lee, T.K. ; Liu, P.C. ; Gan, C.H. ; Zhang, Y.Q. ; Nga, Y.A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 61 - 64
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642332
Regular:

Nitrogen implantation into the channel region was used for the reduction of the "Reverse Short Channel Effect(RSCE)". This approach was found to be very effective in reducing the RSCE without... View More

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