IEEE - Institute of Electrical and Electronics Engineers, Inc. - Theoretical model and computer simulation results of enhanced diffusion of high-temperature implanted aluminum in silicon carbide

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Gadiyak, G.V.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 50 - 53
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642329
Regular:

Wide application of silicon carbide (SiC) films in microelectronics devices makes especially important predictions of the doping profiles during and/or after thermal treatment. A macroscopic... View More

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