IEEE - Institute of Electrical and Electronics Engineers, Inc. - Extraction of the threshold voltage of MOSFETs: an overview

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Liou, J.J. ; Ortiz-Condez, A. ; Sanchez, F.G.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 31 - 38
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642325
Regular:

The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper gives an overview of the existing methods for extracting the threshold voltage of MOSFETs. In... View More

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