IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mechanism of flicker noise in a-Si:H thin films

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Ho, W.Y. ; Surya, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 27 - 30
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642324
Regular:

Flicker noise in n-type hydrogenated amorphous silicon is studied from room temperature to about 420 K. The device is first annealed at 450 K and subsequently cooled at rates of 0.5 K/s or 0.02... View More

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