IEEE - Institute of Electrical and Electronics Engineers, Inc. - PNP bipolar structure design for low voltage 0.6 /spl mu/m complementary BiCMOS technology

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Belaroussi, M.T. ; Djezzar, B. ; Mekhaldi, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 23 - 26
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642323
Regular:

This paper describes simulation results of a vertical PNP bipolar structure design suitable for low voltage application which can be fabricated in BiCMOS technology. This study is carried out... View More

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