IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of latchup immunity for silicided source/drain at different n+ implant energy

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Leong Kam Chew ; Liu Po Chen ; Gan Chock Hing ; Qian Gang ; Lee Yong Meng ; Lap Chan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 15 - 18
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642310
Regular:

N-channel MOSFET devices with excellent latchup immunity for 0.25 /spl mu/m technology are fabricated with 50 /spl Aring/ gate oxide, retrograde N-Well, shallow junction (30 keV), and titanium... View More

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