IEEE - Institute of Electrical and Electronics Engineers, Inc. - Tilt angle effect on optimizing HALO PMOS and NMOS performance

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Jiong-Guang Su ; Chi-Tsung Huang ; Shyh-Chyi Wong ; Chang-Ching Cheng ; Chih-Chiang Wang ; Shiang Huang-Lu ; Bing-Yui Tsui
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 11 - 14
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642301
Regular:

Deep submicrometer MOS devices often need special structures to optimize their performance. The HALO structure, or pocket implant, is usually adopted for PMOS to reduce off-state leakage current... View More

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