IEEE - Institute of Electrical and Electronics Engineers, Inc. - n/sup +//p ultra-shallow junction formation with plasma immersion ion implantation

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Yang, B.L. ; Jones, E.C. ; Cheung, N.W. ; Jiqun Shao ; Wong, H. ; Cheng, Y.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 7 - 10
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642287
Regular:

n/sup +//p ultra-shallow junction formed by PH/sub 3/ Plasma Immersion Ion Implantation (PIII) have been studied. Diodes with good electrical characteristics have been obtained and mechanisms of... View More

Advertisement