IEEE - Institute of Electrical and Electronics Engineers, Inc. - Plasma doping for ultra-shallow junctions

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

Author(s): Chung Chan ; Shu Qin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Hong Kong, Hong Kong
Conference Date: 30 August 1997
Page(s): 2 - 6
ISBN (Paper): 0-7803-3802-2
DOI: 10.1109/HKEDM.1997.642026
Regular:

Plasma doping (PD) processes utilizing PH/sub 3//He and B/sub 2/H/sub 4//He plasmas to fabricate CMOS devices are presented. The applications of PD in ultra-shallow junctions are discussed. Low... View More

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