IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transmission electron microscopy of high threshold voltage, high contact resistance, and high sheet resistance of MOS device

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Tan Tsu Sheng ; Chih Hang Tung ; Wang, J.L.F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 284 - 289
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638356
Regular:

Transmission electron microscopic examination (TEM) on VLSI process device is presented. Local step coverage and non-uniformity on silicidation has induced high sheet resistance and high contact... View More

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