IEEE - Institute of Electrical and Electronics Engineers, Inc. - Failure analysis of noise characteristics in GaAs MESFETs with parametric modeling approach

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Jae Kyoung Mun ; Haecheon Kim ; Chung-Hwan Kim ; Min-Gun Kim ; Jae Jin Lee ; Kwang-Eui Pyun
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 260 - 263
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638342
Regular:

The noise degradation of GaAs MESFETs was investigated by thermal step stress tests with no bias in atmosphere. Minimum noise figure, associated gain, scattering parameters, and C-V profiles were... View More

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