IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hot carrier induced emitter junction degradation of AlGaAs/GaAs HBTs

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Chung Kun Song ; Duk Young Kim ; Do Hyun Kim ; Jae Hoon Choi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 238 - 243
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638240
Regular:

The origin of emitter-base junction degradation of AlGaAs/GaAs HBTs, which were stressed by reverse bias in the avalanche regime, was found to be hot carriers generated in the space charge region... View More

Advertisement