IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new mechanism of leakage current in ultra-shallow junctions with TiSi/sub 2/ contacts

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Wai Shing Lau ; Peng Wei Qian ; Rong Zhao
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 207 - 212
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638206
Regular:

For shallow n/sup +//p and p/sup +//n junctions with TiSi/sub 2/ contacts, the leakage current quite frequently increases after silicidation. When the Ti layer for silicidation is thick, the... View More

Advertisement