IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dislocation multiplication inside contact holes

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Yong-Fen Hsieh ; Yang-Chu Hwang ; Jui-Mei Fu ; Yuan-Ching Peng ; Lih-Juann Chen
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 202 - 206
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638203
Regular:

Ion implantation into contact holes has been widely used to dope the specific contact area and to reduce the contact resistance. In this study, mask edge defects were observed at the edge area of... View More

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