IEEE - Institute of Electrical and Electronics Engineers, Inc. - EOS induced transistor shift in submicron DRAMs

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Tan, W. ; Goh Ko Kah ; Corum, D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 196 - 201
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638201
Regular:

EOS (Electrical Over-Stress) and ESD (Electro-Static Discharge) damage in sub-micron integrated circuits are often subtle and difficult to characterize. As transistor sizes shrink, we need to be... View More

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