IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of GaAs HBT failure mechanisms: impact on life test strategy

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Maneux, C. ; Labat, N. ; Saysset, N. ; Touboul, A. ; Danto, Y. ; Dumas, J.-M. ; Launay, P. ; Dangla, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 182 - 186
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638194
Regular:

A field-induced degradation mechanism responsible for the surface current drift in GaAs HBT is identified on the basis of accelerated ageing tests under bias. Degradations of ohmic contact and... View More

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