IEEE - Institute of Electrical and Electronics Engineers, Inc. - Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Jie, B.B. ; Li, M.F. ; Lou, C.L. ; Lo, K.F. ; Chim, W.K. ; Chan, D.S.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 176 - 181
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638193
Regular:

A direct-current current-voltage (DCIV) technique for the measurement of interface traps and oxide charges in LDD pMOSFETs with n-well in p-substrate is demonstrated. The interface trap densities... View More

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