IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-field time dependent dielectric breakdown characterization of very large area gate oxide [CMOS]

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Bahrami, M. ; Fishbein, B. ; Lindo, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 162 - 166
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638188
Regular:

Time Dependent Dielectric Breakdown analysis is performed on large area gate oxide to characterize the extrinsic portion of distribution. We use failure distribution comparison to identify the... View More

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