IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Lou, C.L. ; Tan, C.B. ; Chim, W.K. ; Chan, D.S.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 140 - 145
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638177
Regular:

We present a new measurement technique-the drain current-conductance method (DCCM) to extract the gate-bias dependent effective channel mobility (/spl mu//sub eff/) and series resistances (R/sub... View More

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