IEEE - Institute of Electrical and Electronics Engineers, Inc. - Direct BSIM3v3 parameter extraction for hot-carrier reliability simulation of N-channel LDD MOSFETs

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Minehane, S. ; Healy, S. ; O'Sullivan, P. ; McCarthy, K. ; Mathewson, A. ; Mason, B.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 133 - 139
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638176
Regular:

A novel direct parameter extraction strategy for the BSIM3v3 MOSFET model, and its application to hot-carrier reliability simulation, is presented in this paper. The use of direct extraction... View More

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