IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modelling the hot-carrier induced degradation in the subthreshold characteristics of submicrometer LDD PMOSFETs

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Lou, C.L. ; Qin, W.H. ; Chim, W.K. ; Chan, D.S.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 127 - 132
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638174
Regular:

Hot-carrier injection is observed to increasingly degrade the subthreshold characteristics with the scaling of LDD PMOSFETs. A physical subthreshold current model is applied to the fresh and... View More

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