IEEE - Institute of Electrical and Electronics Engineers, Inc. - Channel hot carrier impact on the reliability performance of PMOS submicron transistors

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Kitagawa, I. ; Baumann, R. ; Takigasaki, I. ; Maeda, K. ; Ohashi, Y. ; Kikuchi, Y. ; Murata, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 125 - 126
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638173
Regular:

Channel hot carrier (CHC) effects in PMOS transistors increase the drive current and reduce the threshold voltage (Vt). While these changes improve the device switching speed, the decreased Vt... View More

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