IEEE - Institute of Electrical and Electronics Engineers, Inc. - ESD effects on power supply clamps [CMOS ICs]

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Teong-San Yeoh
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 121 - 124
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638156
Regular:

Electrostatic discharge (ESD) damage is a common failure mechanism that is seen on CMOS integrated circuit devices. Due to the ever increasing shrinkage in transistor geometries, prevention of ESD... View More

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