IEEE - Institute of Electrical and Electronics Engineers, Inc. - Reliability investigation of ultrathin oxides grown by high pressure oxidation and nitrided in N/sub 2/O for ULSI device applications

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): Tae Moon Roh ; Dae Woo Lee ; Jongdae Kim ; Kyu Ha Baek ; Jin Gun Koo ; Duk Dong Lee ; Kee-Soo Nam
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Singapore
Conference Date: 25 July 1997
Page(s): 7 - 11
ISBN (Paper): 0-7803-3985-1
DOI: 10.1109/IPFA.1997.638064
Regular:

The reliability of new ultrathin oxides grown by high pressure oxidation (HIPOX) has been evaluated in order to use gate insulators for ULSI MOSFETs. From the results of the TDDB characteristics... View More

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