IEEE - Institute of Electrical and Electronics Engineers, Inc. - Intrinsic leakage in low power deep submicron CMOS ICs

Proceedings International Test Conference 1997

Author(s): Keshavarzi, A. ; Roy, K. ; Hawkins, C.F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Washington, DC, USA, USA
Conference Date: 6 November 1997
Page(s): 146 - 155
ISBN (Paper): 0-7803-4209-7
ISSN (Paper): 1089-3539
DOI: 10.1109/TEST.1997.639607
Regular:

The large leakage currents in deep submicron transistors threaten future products and established quality manufacturing techniques. These include the ability to manufacture low power and battery... View More

Advertisement