IEEE - Institute of Electrical and Electronics Engineers, Inc. - The HgFET: a new characterization tool for SOI silicon film properties

1997 IEEE International SOI Conference Proceedings

Author(s): Hovel, H.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 180 - 181
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634992
Regular:

Summary form only given. SOI starting wafer characterization relies heavily on non-destructive measurements such as thickness, uniformity, and lifetime. Leakage current through the BOX is... View More

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