IEEE - Institute of Electrical and Electronics Engineers, Inc. - Extrapolation of DC device lifetime in body-floating and body-grounded SOI MOSFETS

1997 IEEE International SOI Conference Proceedings

Author(s): Sherony, M.J. ; Antoniadis, D.A. ; Sleight, J.W. ; Mistry, K.R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 178 - 179
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634991
Regular:

The extrapolated dc lifetime of both body-floating and body-grounded partially-depleted SOI n-MOSFETs was demonstrated to be similar when stress conditions corresponding to realistic service... View More

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