IEEE - Institute of Electrical and Electronics Engineers, Inc. - Predictive model of SOI buried oxide charging based on statistical mechanics and spin resonance data

1997 IEEE International SOI Conference Proceedings

Author(s): Conley, J.F., Jr. ; Lenahan, P.M. ; Cole, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 176 - 177
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634990
Regular:

In partially depleted NMOS transistors on SOI, back-channel leakage problems are caused by radiation-induced hole trapping at point defect precursors in the buried oxide (BOX). Thus, a predictive... View More

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