IEEE - Institute of Electrical and Electronics Engineers, Inc. - Radiation hardened SOI CMOS and 1M SRAM

1997 IEEE International SOI Conference Proceedings

Author(s): Fechner, P.S. ; Dougal, G.D. ; Sullwold, J.G. ; Swanson, R. ; Shaw, G.A. ; Liu, S.T. ; Yue, C.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 172 - 173
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634988
Regular:

Describes 2M rad(SiO/sub 2/) radiation hardened partially depleted SOI CMOS technology used to fabricate a 1M SRAM on full dose SIMOX (Separation by IMplantation of OXygen) wafers with an oxygen... View More

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