IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of H/sub 2/ annealing on silicon quality and 1/f noise in SOS

1997 IEEE International SOI Conference Proceedings

Author(s): Morishita, T. ; Moriyasu, Y. ; Kawakami, Y. ; Matsui, M. ; Kobayashi, T. ; Kimura, M. ; Reedy, R.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 150 - 151
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634977
Regular:

In this work, we have investigated silicon surface defect of SOS that had been subjected to H/sub 2/ annealing at temperature ranging from 900/spl deg/C to 1150/spl deg/C by means of SEM. We have... View More

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