IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hot-carrier-induced degradation in deep submicron Unibond and SIMOX MOSFETs

1997 IEEE International SOI Conference Proceedings

Author(s): Renn, S.H. ; Raynaud, C. ; Pelloie, J.L. ; Balestra, F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 146 - 147
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634975
Regular:

SOI devices are greatly competitive for the ULSI era due to significantly improved electrical properties compared with bulk devices. However, when the gate length is shortened in the deep... View More

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