IEEE - Institute of Electrical and Electronics Engineers, Inc. - BOX quality as measured by hydrogen-anneal-induced positive charge transport

1997 IEEE International SOI Conference Proceedings

Author(s): Lawrence, R.K. ; Hughes, H.L. ; Stahlbush, R.E. ; Ma, D.I. ; Twigg, M.E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 142 - 143
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634973
Regular:

The transport of positive charge introduced by hydrogen annealing has been found to depend on the quality of the Buried-Oxide (BOX). The BOX point-contact transistor current-voltage (IV)... View More

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