IEEE - Institute of Electrical and Electronics Engineers, Inc. - Multiple transient effects in SOI transistors: Systematic measurements and simulation

1997 IEEE International SOI Conference Proceedings

Author(s): Weiser, D. ; Munteanu, D. ; Cristoloveanu, S. ; Faynot, O. ; Pelloie, J.L. ; Fossum, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 138 - 139
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634971
Regular:

The use of partially depleted SOI CMOS technology in mainstream ULSI can be limited by transient floating body effects, that make circuit design problematic. Time-dependent V/sub T/ is observed in... View More

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