IEEE - Institute of Electrical and Electronics Engineers, Inc. - Novel polysilicon sidewall gate silicon-on-sapphire MOSFET for power amplifier applications

1997 IEEE International SOI Conference Proceedings

Author(s): Johnson, R.A. ; Kasa, S.D. ; de la Houssaye, P.R. ; Garcia, G.A. ; Lagnado, I. ; Asbeck, P.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 136 - 137
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634970
Regular:

We report the processing and DC and microwave characteristics of a novel thin-film silicon-on-sapphire MOS transistor which utilizes a sidewall process to realize a deep sub-micron gate length... View More

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