IEEE - Institute of Electrical and Electronics Engineers, Inc. - A comparison of oxidation induced stress and defectivity in SIMOX and bonded SOI wafers

1997 IEEE International SOI Conference Proceedings

Author(s): Mendicino, M. ; Yang, I. ; Cave, N. ; Veeraraghavan, S. ; Gilbert, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 132 - 133
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634968
Regular:

We have shown that the trench liner oxidation step in Mesa or shallow trench isolation can affect stress in active Si areas. Significant differences in the response to that stress were observed... View More

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