IEEE - Institute of Electrical and Electronics Engineers, Inc. - Experimental verification of buried-oxide with over-8 MV/cm breakdown fields in low-dose SIMOX wafers

1997 IEEE International SOI Conference Proceedings

Author(s): Kawamura, K. ; Matsumura, A. ; Yano, T. ; Hamaguchi, I. ; Nagatake, Y. ; Takayama, S. ; Tachimori, M. ; Kurumada, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 122 - 123
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634963
Regular:

Low-dose SIMOX wafers have attractive features as the material for advanced commercial CMOS LSIs, such as lower cost, and lower threading dislocation density (/spl sim/10/sup 2/ cm/sup -2/) than... View More

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