IEEE - Institute of Electrical and Electronics Engineers, Inc. - Carrier recombination lifetime measurement of bonded SOI wafers by microwave photoconductivity decay method

1997 IEEE International SOI Conference Proceedings

Author(s): Ahmed, S. ; Catarini, B. ; Lizotte, S. ; Iba, K. ; Hashizume, H. ; Sumie, S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 120 - 121
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634962
Regular:

Microwave photoconductivity decay (/spl mu/PCD) method was used for the measurement of bulk carrier recombination lifetime of bonded silicon-on-insulator (SOI) wafers in order to evaluate... View More

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