IEEE - Institute of Electrical and Electronics Engineers, Inc. - Charge trapping in Si implanted SIMOX

1997 IEEE International SOI Conference Proceedings

Author(s): Bhar, T.N. ; Lambert, R.J. ; Hughes, H.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 118 - 119
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634961
Regular:

The implantation and annealing processes of SIMOX fabrication may result in excess silicon atoms located in the buried oxide. These excess silicon atoms have been postulated by various researchers... View More

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