IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hole trap investigations in supplemental oxygen SIMOX wafers by opposite channel based charge injection

1997 IEEE International SOI Conference Proceedings

Author(s): Zhao, X. ; Duan, F.L. ; Thanailakis, A. ; Ioannou, D.E. ; Lawrence, R.K. ; Hughes, H.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 116 - 117
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634960
Regular:

It is well known that excess silicon exists in the buried oxide of SIMOX wafers, and that its presence introduces a variety of carrier traps at increased densities, as compared to thermal SiO/sub... View More

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