IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterisation of geometry dependence of SOI MOSFET thermal resistance and capacitance parameters

1997 IEEE International SOI Conference Proceedings

Author(s): Tenbroek, B.M. ; Redman-White, W. ; Lee, M.S.L. ; Bunyan, R.J.T. ; Uren, M.J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 114 - 115
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634959
Regular:

The study presented here provides valuable insight into the variation of thermal resistances and capacitances with SOI MOSFET device geometry. It demonstrates that small-signal measurements are a... View More

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