IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analytical short-channel effect model for ultra-thin SOI MOSFETs including floating body effects

1997 IEEE International SOI Conference Proceedings

Author(s): Adan, A.O. ; Fukushima, Y. ; Higashi, K. ; Kagisawa, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 106 - 107
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634955
Regular:

Summary form only given. SOI MOSFETs implemented on ultra-thin superficial Si film are regarded as promising candidates for the deep-half micron CMOS generation due to their excellent... View More

Advertisement