IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analytical short-channel effect model for ultra-thin SOI MOSFETs including floating body effects
1997 IEEE International SOI Conference Proceedings
Author(s): | Adan, A.O. ; Fukushima, Y. ; Higashi, K. ; Kagisawa, A. |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 January 1997 |
Conference Location: | Fish Camp, CA, USA, USA |
Conference Date: | 6 October 1997 |
Page(s): | 106 - 107 |
ISBN (Paper): | 0-7803-3938-X |
ISSN (Paper): | 1078-621X |
DOI: | 10.1109/SOI.1997.634955 |
Regular:
Summary form only given. SOI MOSFETs implemented on ultra-thin superficial Si film are regarded as promising candidates for the deep-half micron CMOS generation due to their excellent... View More