IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design and analysis of a novel mixed accumulation/inversion mode FD SOI MOSFET

1997 IEEE International SOI Conference Proceedings

Author(s): Daun, F.L. ; Ioannou, D.E.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 100 - 101
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634952
Regular:

In this paper, a new fully-depleted SOI MOSFET device is designed and analyzed, which combines the advantages of both the inversion mode and the accumulation mode devices: its performance is... View More

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