IEEE - Institute of Electrical and Electronics Engineers, Inc. - Two-dimensional simulations of the parasitic edge conduction in deep submicron fully depleted SOI NMOS devices

1997 IEEE International SOI Conference Proceedings

Author(s): Faynot, O. ; Raynaud, C. ; Rivallin, P. ; Pelioie, J.L.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 98 - 99
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634951
Regular:

This paper presents a simulation analysis of the edge device for a deep sub-micron fully depleted SOI technology. The influences of the doping level, of the remaining LOCOS oxide and of the LOCOS... View More

Advertisement