IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physical background of hot-carrier-induced abnormal gm degradation in a sub-0.1-/spl mu/m-channel nMOSFETs/SIMOX with an LDD structure

1997 IEEE International SOI Conference Proceedings

Author(s): Omura, Y.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1997
Conference Location: Fish Camp, CA, USA, USA
Conference Date: 6 October 1997
Page(s): 96 - 97
ISBN (Paper): 0-7803-3938-X
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.1997.634950
Regular:

This paper describes hot-carrier-induced abnormal g/sub m/ degradation in 0.04-/spl mu/m-channel nMOSFETs/SIMOX, which is not easily predicted, and its physical background.

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