IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physical background of hot-carrier-induced abnormal gm degradation in a sub-0.1-/spl mu/m-channel nMOSFETs/SIMOX with an LDD structure
1997 IEEE International SOI Conference Proceedings
|Publisher:||IEEE - Institute of Electrical and Electronics Engineers, Inc.|
|Publication Date:||1 January 1997|
|Conference Location:||Fish Camp, CA, USA, USA|
|Conference Date:||6 October 1997|
|Page(s):||96 - 97|
This paper describes hot-carrier-induced abnormal g/sub m/ degradation in 0.04-/spl mu/m-channel nMOSFETs/SIMOX, which is not easily predicted, and its physical background.